Title :
Simulation of kink behaviour in GaAs MESFET with semi-insulating substrate
Author :
Horio, K. ; Satoh, Kei
Author_Institution :
Shibaura Inst. of Technol., Omiya, Japan
fDate :
6/10/1993 12:00:00 AM
Abstract :
A numerical simulation of GaAs MESFETs with semi-insulating substrates impurity-compensated to deep levels is carried out by considering the impact ionisation of the carriers. It is shown that in cases where Cr acts as a hole trap, an increase in drain conductance (´kink´) arises because holes that are generated by impact ionisation flow into the substrate and are captured by the traps to strongly modulate the space-charge distributions.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; deep levels; gallium arsenide; hole traps; impact ionisation; semiconductor device models; GaAs; GaAs MESFETs; GaAs:Cr; deep levels; drain conductance; hole trap; impact ionisation; impurity compensation; kink behaviour; numerical simulation; semi-insulating substrate; space-charge distributions;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930753
