DocumentCode
915676
Title
Monolithic GaAs/AlGaAs pin MESFET photoreceiver using a single molecular beam epitaxy growth step
Author
Nichols, David ; Dutta, N.K. ; Berger, P.R. ; Smith, Peter ; Sivco, D. ; Cho, Andrew Y.
Author_Institution
AT&T Bell Labs., Murray Hil, NJ, USA
Volume
29
Issue
12
fYear
1993
fDate
6/10/1993 12:00:00 AM
Firstpage
1133
Lastpage
1134
Abstract
A monolithic pin/MESFET photoreceiver in the GaAs/AlGaAs system was investigated. The structure used a single epitaxial growth step in which the pin photodiode was grown on top of the MESFET. The photoreceivers exhibited flatband gains as high as 17 dB and bandwidths as high as 2.0 GHz.
Keywords
III-V semiconductors; aluminium compounds; field effect integrated circuits; gallium arsenide; integrated optoelectronics; molecular beam epitaxial growth; optical receivers; p-i-n photodiodes; semiconductor growth; 17 dB; 2 GHz; GaAs-AlGaAs; bandwidths; flatband gains; molecular beam epitaxy growth; monolithic pin/MESFET photoreceiver; pin photodiode; single epitaxial growth step;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19930756
Filename
220852
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