Stability Analysis in CNTFETs

Author

Haji-Nasiri, S. ; Moravvej-Farshi, Mohammad Kazem

Author_Institution

Adv. Devices Simulation Lab., Tarbiat Modares, Tehran, Iran

Volume

34

Issue

2

fYear

2013

fDate

Feb. 2013

Firstpage

301

Lastpage

303

Abstract

We present a Nyquist stability criterion, together with step time responses, for the small-signal equivalent circuit model of common-source-configured carbon-nanotube (CNT) field-effect transistors (CNTFETs) made of 100 CNTs at 10-nm pitch as well as single CNTs, for the first time. In this analysis considering tube-to-tube variations in CNTs´ diameters, dependence of the degree of relative stability on CNT dimensions is acquired. Simulations show that the step responses for both types of CNTFETs, unlike those for CNT/GNR-based local interconnects, pose multiharmonic oscillations. Amplification of such harmonics by CNTFET can cause instability.

Keywords

Nyquist stability; carbon nanotubes; field effect transistors; CNT-GNR-based local interconnects; CNTFET; Nyquist stability criterion; common-source-conhgured carbon-nanotube held-effect transistors; pose multiharmonic oscillations; small-signal equivalent circuit model; stability analysis; tube-to-tube variations; CNTFETs; Carbon nanotubes; Circuit stability; Integrated circuit interconnections; Stability criteria; Carbon-nanotube (CNT) field-effect transistors (CNTFETs); Nyquist stability; time responses;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2012.2235136

Filename

6410340