Title :
Future CMOS scaling and reliability
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
fDate :
5/1/1993 12:00:00 AM
Abstract :
The goals and constraints of MOSFET scaling are reviewed, and the role of reliability constraints is highlighted. It is concluded that judicial shrinking of MOSFET device dimensions can sustain the historical trend of scaling through the 0.09-μm (4-Gb SRAM) generation of technology, which may be used for IC production in the year 2010. Power supply voltage reduction plus the desire for large transistor current will create a demand for ever thinner gate oxides that can withstand ever higher electric field. Built-in reliability must replace the traditional end-of-the-line reliability testing for future complex circuits. Circuit reliability simulation may be one of the necessary tools for achieving built-in reliability
Keywords :
CMOS integrated circuits; circuit reliability; insulated gate field effect transistors; integrated circuit manufacture; integrated circuit technology; 0.09 micron; CMOS scaling; IC production; MOSFET scaling; gate oxides; reliability; simulation; supply voltage reduction; Circuit testing; Electronics industry; Integrated circuit reliability; Leakage current; MOSFET circuits; Power supplies; Production; Random access memory; Transistors; Voltage;
Journal_Title :
Proceedings of the IEEE
