• DocumentCode
    915859
  • Title

    Composite IMPATT diodes for 110-GHz operation

  • Author

    Marinaccio, L.P.

  • Volume
    59
  • Issue
    1
  • fYear
    1971
  • Firstpage
    94
  • Lastpage
    95
  • Abstract
    The assembly of composite silicon IMPATT diodes for 110-GHz operation with improved power-handling capability is described. Up to 140 mW CW output power at burnout was observed with a three-wafer assembly compared with 110 mW and 74 mW for the best performing double- and single-wafer units, respectively. The efficiencies were approximately 3 percent.
  • Keywords
    Capacitance; Circuits; Clocks; Diodes; Equations; Etching; Gold; Hardware; Oscillators; Wafer bonding;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1971.8103
  • Filename
    1450033
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=915859