• DocumentCode
    915907
  • Title

    Improved technique for the preparation of GaxAl1--xAs electroluminescent diodes

  • Author

    Beneking, H. ; Mischel, P. ; Schul, G.

  • Author_Institution
    RWTH Aachen, Institut fÿr Halbleitertechnik, Aachen, West Germany
  • Volume
    8
  • Issue
    1
  • fYear
    1972
  • Firstpage
    16
  • Lastpage
    17
  • Abstract
    An improved technique for the preparation of GaxAl1--xAs electroluminescent diodes is described. Multilayer structures grown by liquid-phase epitaxy are used to achieve high external quantum efficiencies.
  • Keywords
    electroluminescence; epitaxial growth; semiconductor diodes; GaxAl1--xAs; electroluminescent diodes; improved technique; multilayer structures; preparation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19720012
  • Filename
    4235455
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=915907