• DocumentCode
    916067
  • Title

    X and Ku band GaAs m.e.s.f.e.t.

  • Author

    Baechtold, W. ; Walter, W. ; Wolf, Philip

  • Author_Institution
    IBM Zurich Research Laboratory, Rÿschlikon, Switzerland
  • Volume
    8
  • Issue
    2
  • fYear
    1972
  • Firstpage
    35
  • Lastpage
    37
  • Abstract
    A GaAs Schottky-barrier f.e.t. (m.e.s.f.e.t.) with a 1 ¿m gate has been built, which is suitable for X band and Ku band applications. The unilateral power gain over the X band is above 9 dB and the noise figure is only 5 dB at 10 GHz.
  • Keywords
    field effect transistors; microwave devices; noise; GaAs Schottky barrier; Ku band; MESFET; X-band; noise figure; unilateral power gain;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19720027
  • Filename
    4235471
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=916067