• DocumentCode
    916301
  • Title

    Work function difference between p-type polycrystalline silicon and n-type single-crystal silicon

  • Author

    Mai, C.C. ; Whitehouse, T.S.

  • Volume
    59
  • Issue
    2
  • fYear
    1971
  • Firstpage
    301
  • Lastpage
    302
  • Abstract
    The work function difference between p-type polycrystalline silicon and n-type single-crystal silicon has been found from flat-band measurements on MNOS capacitors to be +1.55 V when the concentration in the p-type silicon is 1019atoms/cm3and the concentration in the n-type silicon is 1015atoms/cm3.
  • Keywords
    Atomic measurements; Bandwidth; Electrons; Filter bank; Frequency; Inductance; Silicon; Spectral analysis; Speech; Threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1971.8147
  • Filename
    1450077
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=916301