• DocumentCode
    916321
  • Title

    Frequency/temperature relationships of c.w. IMPATT diodes

  • Author

    Tozer, R.C. ; Hobson, G.S.

  • Author_Institution
    University of Sheffield, Department of Electronic & Electrical Engineering, Sheffield, UK
  • Volume
    8
  • Issue
    3
  • fYear
    1972
  • Firstpage
    74
  • Lastpage
    75
  • Abstract
    Some measurements of the relationship between frequency and ambient temperature for c.w. IMPATT diodes are reported. Several diodes have been characterised between 9 and 13 GHz for various bias and coupling conditions. An interpretation of the results is presented on the basis of several simple models. Reasonable agreement with experiment is observed, considering the limitations of the models.
  • Keywords
    IMPATT diodes; semiconductor device models; thermal effects; IMPATT diodes; ambient temperature; coupling; modelling;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19720053
  • Filename
    4235498