Title :
Explicit formulas for GaAs f.e.t. amplifier interstage matching networks
Author :
Dao, T.H. ; Ha, T.T.
Author_Institution :
RCA Mobile Communication Systems, Meadow Lands, USA
fDate :
2/1/1981 12:00:00 AM
Abstract :
Explict formulas for gain-bandwidth limitations and element values of the Chebyshev and Butterworth bandpass matching networks of two GaAs f.e.t.s in direct cascade are derived. Procedure for gain rolloff compensation using closed-form expressions is also presented. The technique is simple and can be used by nonspecialists without considerable effort.
Keywords :
III-V semiconductors; gallium arsenide; microwave amplifiers; solid-state microwave circuits; Butterworth; Chebyshev; GaAs FET amplifier; bandpass matching networks; closed-form expressions; element values; gain rolloff compensation; gain-bandwidth limitations; interstage matching networks;
Journal_Title :
Electronic Circuits and Systems, IEE Proceedings G
DOI :
10.1049/ip-g-1:19810005
