DocumentCode
916509
Title
Resonant-cap structures for IMPATT diodes
Author
Groves, I.S. ; Lewis, Donald E.
Author_Institution
Post Office Research Department, Ipswich, UK
Volume
8
Issue
4
fYear
1972
Firstpage
98
Lastpage
99
Abstract
A series of measurements at 10 GHz giving the performance of IMPATT diodes obtained when varying the parameters of a cap circuit are presented. The results indicate that, with correctly chosen parameters, the circuit is suitable for operation over a 40% bandwidth.
Keywords
IMPATT diodes; microwave devices; resonators; 10 GHz; IMPATT diodes; cap circuit; resonators; waveguide components;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19720071
Filename
4235517
Link To Document