DocumentCode :
916533
Title :
Motion Characterizations of Lateral Micromachined Sensor Based on Stroboscopic Measurements
Author :
Ong, Andojo Ongkodjojo ; Tay, Francis Eng Hock
Author_Institution :
Dept. of Mech. Eng., Nat. Univ. of Singapore
Volume :
7
Issue :
2
fYear :
2007
Firstpage :
163
Lastpage :
171
Abstract :
In this paper, we illustrate the capabilities of the Planar Motion Analyzer (PMA) with a study of the dynamic behavior of a micromachined structure. Dynamic characterizations and measurement settings are also demonstrated. The optical measurement system uses the light-emitting diode (LED) based vibration measurement technique for imaging, and then measuring the lateral resonant frequency and sensor displacements, as well. The PMA analyzes in-plane vibrations of a MEMS device under a clear microscope. Its working principle is based on the stroboscopic principle. Based on this principle, characterization results in both time and frequency domains can be accurately generated and analyzed. Our device example for the measurement is a tunneling-based micro-resonator, which was fabricated using the Backside Released SOI process. The tunneling behavior of the sensor can be observed by controlling the motion of the tunneling tip towards the opposing electrode with a typical gap of 10 Aring. This very small gap can be easily achieved by the Bode measurement of PMA for shifting the LED-strobe flashes at a small increment of phase angle over the whole motion of the sensor. In other words, smaller motions of the tip will be easily achieved, when the number of shots per period are larger. For our tunneling measurement, the phase angle shift is 0.5deg with 720 shots per period. The lateral moving proof mass is suspended by the folded springs, and its tip protrudes to an opposing electrode by means of electrostatic forces. The tunneling current has been observed to be exponentially increasing, when the tunneling gap is decreasing. However, the further large current is actually a contacting current, when the mechanical contact happens between the tunneling tip and the opposing electrode. The resonant frequency of the device is ~5 kHz obtained from the Bode measurement
Keywords :
displacement measurement; frequency measurement; light emitting diodes; microelectrodes; micromachining; microsensors; optical variables measurement; stroboscopes; time-frequency analysis; tunnelling; vibration measurement; 10 Aring; Bode measurement; LED-strobe flashes; MEMS device; backside released SOI process; dynamic characterizations; electrostatic forces; folded springs; frequency domains; lateral micromachined sensor; lateral moving proof mass; lateral resonant frequency; light-emitting diode; mechanical contact; motion characterizations; optical measurement system; phase angle shift; planar motion analyzer; sensor displacements; stroboscopic measurements; time domains; tunneling current; tunneling measurement; tunneling-based microresonator; vibration measurement technique; Displacement measurement; Electrodes; Frequency measurement; Light emitting diodes; Motion measurement; Optical sensors; Resonant frequency; Sensor phenomena and characterization; Tunneling; Vibration measurement; MEMS characterizations; Planar Motion Analyzer (PMA); microresonator; stroboscopic; tunneling sensor;
fLanguage :
English
Journal_Title :
Sensors Journal, IEEE
Publisher :
ieee
ISSN :
1530-437X
Type :
jour
DOI :
10.1109/JSEN.2006.886871
Filename :
4049785
Link To Document :
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