• DocumentCode
    916593
  • Title

    Gain and noise figure of GaAs transferred-electron amplifiers at 34 GHz

  • Author

    Baskaran, S. ; Robson, P.N.

  • Author_Institution
    University of Sheffield, Department of Electronic & Electrical Engineering, Sheffield, UK
  • Volume
    8
  • Issue
    5
  • fYear
    1972
  • Firstpage
    109
  • Lastpage
    110
  • Abstract
    Experimental results obtained from supercritical c.w. GaAs transferred-electron reflection amplifiers at about 34 GHz are reported. Gains in excess of 20 dB have been observed with typical (gain)¿×bandwidth products of 1.0¿1.5GHz. The best noise figure is 18 dB, and this parameter is shown to be sensitive to the doping profile. The output power for 1 dB gain compression is typically 2.5¿3.0 mW.
  • Keywords
    gain measurement; microwave amplifiers; noise measurement; doping profile; gain bandwidth product; gain compression; noise figure; transferred electron reflection amplifiers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19720079
  • Filename
    4235526
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=916593