DocumentCode
916724
Title
A millimeter wave varactor with low parasitics
Author
Calviello, J.A. ; Smilowitz, B.
Volume
59
Issue
3
fYear
1971
fDate
3/1/1971 12:00:00 AM
Firstpage
419
Lastpage
420
Abstract
P-n and metal-semiconductor GaAs varactors with typical zero-bias capacitance of 0.15 pF and cutoff frequency of 700 GHz have been fabricated. The associated parasitic capacitance was 0.025 pF and the series inductance was 0.08 nH. The varactors have been used without degradation from 15°K to 400°K. The fabrication processes and the properties of these devices are described.
Keywords
Broadband amplifiers; Copper; Degradation; Gallium arsenide; Gold; Inductance; Palladium; Parasitic capacitance; Resistors; Varactors;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1971.8187
Filename
1450117
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