• DocumentCode
    916728
  • Title

    Silicon detectors for charged particles manufactured by conventional planar technology

  • Author

    Sueva, D. ; Spassov, V. ; Chikov, N. ; Vapirev, E.I. ; Ivanov, I.

  • Author_Institution
    Fac. of Phys., Sophia Univ., Bulgaria
  • Volume
    40
  • Issue
    3
  • fYear
    1993
  • fDate
    6/1/1993 12:00:00 AM
  • Firstpage
    257
  • Lastpage
    261
  • Abstract
    Two types of detectors were developed by conventional planar technology: a p+-n-n+ ion-implanted detector and a n+p-p+ diffused detector. There was no observable difference in the quality of the detectors manufactured in this way. Both detectors were investigated for alpha and beta spectroscopy and exhibited good energy resolution. With an additional deposition of a 6LiF converter layer the detectors can be used for detection of neutrons
  • Keywords
    alpha-particle spectra; beta-ray spectra; neutron detection and measurement; semiconductor counters; 6LiF converter; Si detectors; alpha spectroscopy; beta spectroscopy; energy resolution; n+p-p+ diffused detector; neutron detector; p+-n-n+ ion-implanted detector; Charge carriers; Detectors; Ion implantation; Lead compounds; Manufacturing; Neutrons; Passivation; Silicon; Temperature; Testing;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/23.221047
  • Filename
    221047
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=916728