Electrical and structural properties of diodes fabricated in thick, selectively deposited Si/Si/sub 1-x/Ge/sub x/ epitaxial layers

Author

Kamins, Theodore I. ; Nauka, K. ; Jacowitz, R.D. ; HOyt, Judy L. ; Noble, D.B. ; Gibbons, J.F.

Author_Institution

Hewlett-Packard Co., Palo Alto, CA, USA

Volume

13

Issue

4

fYear

1992

fDate

4/1/1992 12:00:00 AM

Firstpage

177

Lastpage

179

Abstract

The characteristics of diodes fabricated in thick Si/sub 1-x/Ge/sub x/ layers formed by selective epitaxial deposition have been examined by DC electrical measurements, transmission electron microscopy, and X-ray topography. Because depositing in restricted areas limits the propagation of misfit dislocations in thick layers, a lower misfit dislocation density is found in small-area deposited regions. Similarly, diodes fabricated in small deposited regions have more ideal forward characteristics than diodes fabricated in large regions.<>

Keywords

Ge-Si alloys; X-ray diffraction examination of materials; dislocation density; elemental semiconductors; semiconductor diodes; semiconductor epitaxial layers; semiconductor growth; silicon; transmission electron microscope examination of materials; vapour phase epitaxial growth; CVD growth; DC electrical measurements; Si-Si/sub 1-x/Ge/sub x/ thick layers; X-ray topography; diodes; forward characteristics; misfit dislocation density; selective epitaxial deposition; structural properties; transmission electron microscopy; Bipolar transistors; Electric variables measurement; Epitaxial layers; Heterojunctions; Microscopy; Rapid thermal processing; Semiconductor diodes; Silicon; Surfaces; Thickness measurement;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.145012

Filename

145012