Title :
Complementary AlGaAs/GaAs HBT I/sup 2/L (CHI/sup 2/L) technology
Author :
Enquist, Paul M. ; Slater, David B., Jr. ; Swart, Jacobus W.
Author_Institution :
Research Triangle Inst., Research Triangle Park, NC, USA
fDate :
4/1/1992 12:00:00 AM
Abstract :
The monolithic integration of non-self-aligned AlGaAs/GaAs N-p-n and P-n-p HBTs with selective organometallic vapor-phase epitaxy (OMVPE) has been utilized to demonstrate a low-power high-speed integrated injection logic (I/sup 2/L) technology. Seventeen-stage ring oscillators with a logic swing of 0.7 V exhibited a delay of 65 ps per gate with power dissipation of 13 mW per gate for a speed-power product of 850 fJ. This value was in excellent agreement with SPICE simulations based on extracted device parameters which predicted a speed-power product of 840 fJ. Additional simulations predicated a 28-fJ speed-power product and more than a factor of 2 reduction in gate delay with improved epitaxial design and use of submicrometer emitters and self-aligned processing.<>
Keywords :
III-V semiconductors; aluminium compounds; bipolar integrated circuits; gallium arsenide; heterojunction bipolar transistors; integrated circuit technology; integrated injection logic; logic gates; vapour phase epitaxial growth; 13 mW; 65 ps; AlGaAs-GaAs; N-p-n HBT; OMVPE; P-n-p HBTs; SPICE simulations; complementary HBT I/sup 2/L technology; delay; integrated injection logic; logic swing; monolithic integration; power dissipation; selective organometallic vapor-phase epitaxy; self-aligned processing; seventeen stage ring oscillators; speed-power product; submicrometer emitters; Delay; Epitaxial growth; Gallium arsenide; Heterojunction bipolar transistors; High speed integrated circuits; Logic devices; Monolithic integrated circuits; Power dissipation; Ring oscillators; SPICE;
Journal_Title :
Electron Device Letters, IEEE
