Differential optical switching at subnanowatt input power

Author

Hara, K. ; Kojima, K. ; Mitsunga, K. ; Kyuma, K.

Author_Institution

Mitsubishi Electr. Corp., Hyogo, Japan

Volume

1

Issue

11

fYear

1989

Firstpage

370

Lastpage

372

Abstract

An operating technique for a differential optical switching device based on a set of parallel-connected pnpn structures is discussed. The differential function at subnanowatt input powers was demonstrated with AlGaAs/GaAs pnpn devices. The highly sensitive devices are promising for applications both to optical neural networks and to optical digital computing because of the low power consumption of the light emitting devices and the large fan-in/fan-out ratio ( approximately 10/sup 5/).<>

Keywords

III-V semiconductors; aluminium compounds; electro-optical devices; gallium arsenide; light emitting devices; optical information processing; optical switches; semiconductor switches; AlGaAs-GaAs; III-V semiconductors; current-voltage characteristics; differential function; differential optical switching device; fan-in/fan-out ratio; light emitting devices; light-current characteristics; optical digital computing; optical neural networks; parallel-connected pnpn structures; power consumption; subnanowatt input powers; Lighting; Neural networks; Optical computing; Optical devices; Optical fiber networks; Optical sensors; Optical switches; Resistors; Stimulated emission; Voltage;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.43382

Filename

43382