Title :
F.M.-noise and bias-current fluctuations of a silicon Pd-n-p+ microwave oscillator
Author :
Helmcke, J. ; Herbst, Heiner ; Claassen, M. ; Harth, W.
Author_Institution :
Technische Universitÿt Braunschweig, Institut fÿr Hochfrequenztechnik, Braunschweig, West Germany
Abstract :
Fabrication of silicon Pd-n-p+ X band punchthrough transit-time diodes is described. A power output of 14 mW at 10.6 GHz has been obtained. Measurements of the f.m.-noise spectrum at maximum power output and the short-circuit-current noise are presented. At low modulating frequencies, the f.m. noise consists of unconverted current fluctuations. The f.m. single-sideband noise, 500 kHz off the carrier, is 21.5 dB.
Keywords :
microwave oscillators; noise; semiconductor diodes; short-circuit currents; transit time devices; FM noise; X band; bias current; fabrication; fluctuations; microwave oscillator; punchthrough diodes; silicon Pdnp; transit time devices;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19720116
