Dynamic-stress-induced dielectric breakdown in ultrathin nitride/oxide stacked films deposited on rugged polysilicon

Author

Lo, G.Q. ; Kwong, Dim-Lee ; Mathews, V.K. ; Fazan, Pierre C. ; Ditali, A.

Author_Institution

Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA

Volume

13

Issue

4

fYear

1992

fDate

4/1/1992 12:00:00 AM

Firstpage

183

Lastpage

185

Abstract

The dielectric breakdown characteristics of thin reoxidized Si/sub 3/N/sub 4/ films on both smooth and rugged poly-Si have been studied under dynamic stressing (unipolar and bipolar) with frequencies of up to 500 kHz. For capacitors with smooth poly-Si the time to breakdown (t/sub BD/) increases with frequency under unipolar stressing with positive gain bias, whereas it slightly decreases with frequency under unipolar and bipolar stressing with negative gate bias. For capacitors with rugged poly-Si, t/sub BD/ increases with frequency in all cases.<>

Keywords

dielectric thin films; electric breakdown of solids; metal-insulator-semiconductor devices; oxidation; silicon compounds; 0 to 500 kHz; Si; Si/sub 3/N/sub 4/ films; SiO/sub x/N/sub 7/-Si; bipolar stressing; capacitors; dynamic stressing; negative gate bias; positive gain bias; time to breakdown; ultrathin stocked films; Capacitance; Capacitors; Dielectric breakdown; Dielectric substrates; Dielectric thin films; Electrodes; Electron traps; Frequency; Semiconductor films; Stress measurement;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.145014

Filename

145014