Title :
High Power GaAs IMPATT Amplifier
Author :
Nishitani, Kazuo ; Sawano, Hirceshi ; Ishii, Takashi ; Mitsui, Shigeru ; Kaji, Eiji ; Amano, Akira
fDate :
12/1/1977 12:00:00 AM
Abstract :
10-W p-n junction GaAs IMPATT diodes with MTTF more than 106 h, have been developed. Using these diodes, amplifiers of 5-W output power, 10-dB gain, 17-percent efficiency, 150-MHz bandwidth, and 80-dB signal-to-noise ratio (S/N ratio) have been constructed.
Keywords :
Gallium arsenide; High power amplifiers; Microwave devices; P-n junctions; Power amplifiers; Power generation; Schottky barriers; Schottky diodes; Solid state circuits; Thermal resistance;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.1977.1129258
