• DocumentCode
    917017
  • Title

    High Power GaAs IMPATT Amplifier

  • Author

    Nishitani, Kazuo ; Sawano, Hirceshi ; Ishii, Takashi ; Mitsui, Shigeru ; Kaji, Eiji ; Amano, Akira

  • Volume
    25
  • Issue
    12
  • fYear
    1977
  • fDate
    12/1/1977 12:00:00 AM
  • Firstpage
    973
  • Lastpage
    977
  • Abstract
    10-W p-n junction GaAs IMPATT diodes with MTTF more than 106 h, have been developed. Using these diodes, amplifiers of 5-W output power, 10-dB gain, 17-percent efficiency, 150-MHz bandwidth, and 80-dB signal-to-noise ratio (S/N ratio) have been constructed.
  • Keywords
    Gallium arsenide; High power amplifiers; Microwave devices; P-n junctions; Power amplifiers; Power generation; Schottky barriers; Schottky diodes; Solid state circuits; Thermal resistance;
  • fLanguage
    English
  • Journal_Title
    Microwave Theory and Techniques, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9480
  • Type

    jour

  • DOI
    10.1109/TMTT.1977.1129258
  • Filename
    1129258
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=917017