Title :
Statistical nature of impurity-atom diffusion and its influence on the characteristics of narrow-base bipolar transistors
Author :
Kennedy, D.P. ; O´Brien, R.R.
Author_Institution :
IBM Components Division, East Fishkill Laboratories, Hopewell Junction, USA
Abstract :
Statistical fluctuations inherent in any diffusion process could place fundamental limitations on the minimum basewidth obtainable in bipolar-transistor fabrication. Calculations are presented to demonstrate the probability of encountering channels of low impurity-atom density (hence reduced punch-through voltage) in a very-narrow-base transistor.
Keywords :
bipolar transistors; diffusion; semiconductor device manufacture; semiconductor doping; basewidth; bipolar transistors; channel encountering; diffusion process; fabrication; impurity atom density; limitations; narrow base; probability; statistical fluctuations;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19720127
