• DocumentCode
    917088
  • Title

    High etch rates of poly-crystalline 3C-SiC films in magnetron enhanced CHF3 plasmas

  • Author

    Chung, G.S. ; Ohn, C.M.

  • Author_Institution
    Univ. of Ulsan, Ulsan
  • Volume
    43
  • Issue
    20
  • fYear
    2007
  • Firstpage
    1116
  • Lastpage
    1117
  • Abstract
    Magnetron enhanced reactive ion etching (RIE) of poly-crystalline 3C-SiC thin films grown on thermally oxidised Si substrates has been investigated in CHF3 plasmas. The magnetron enhanced RIE can stably etch the poly-crystalline 3C-SiC thin film at a lower ion energy (70 W) without any damage than can the commercial RIE system. The best vertical structure was improved by the addition of 40% O2 and 16% Ar with the CHF3 reactive gas.
  • Keywords
    semiconductor thin films; sputter etching; 3C-SiC thin films; magnetron enhanced plasmas; reactive ion etching;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20071456
  • Filename
    4338217
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=917088