Title :
Emitter-current-limited injection in negative-mobility semiconductors in the limit of zero doping
Author_Institution :
Polytechnical Institute of Bucharest, Department of Electronics & Telecommunications, Bucharest, Romania
Abstract :
A small-signal theory of emitter-current-limited (e.c.l.) injection in negative-mobility materials is given. Semiconductor doping is assumed to be zero and diffusion is neglected. The a.c. conductance of the negative-mobility space is negative and reaches a constant value (which is controllable by modifying the d.c. bias) at frequencies exceeding two or three times the transit-time frequency. In the same frequency range, the injection noise appears considerably attenuated in the external circuit.
Keywords :
III-V semiconductors; electron mobility; gallium arsenide; semiconductor diodes; semiconductors; space charge; space-charge limited devices; emitter current limited injection; negative mobility; noise; semiconductors; small signal theory; zero doping;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19720136
