Title :
Intrinsic Dynamic Properties of High-Characteristic Temperature GaInNAs Laser Diodes Operating at 1.3 μm
Author :
Zhang, Xia ; Gupta, James A. ; Barrios, Pedro J. ; Pakulski, Greg ; Hall, Trevor J.
Author_Institution :
Inst. for Microstruct. Sci., Nat. Res. Council of Canada, Ottawa, Ont.
Abstract :
The properties of a high-characteristic temperature (T0=155K) 1.3-mum GaInNAs-GaAs laser are presented with an emphasis on laser dynamic characteristics evaluated by linewidth enhancement factor and relative intensity noise. It is found that the relatively high differential gain of GaInNAs-GaAs quantum wells leads to a small linewidth enhancement factor of 2.8, indicating a small magnitude of frequency modulation with modulation current. The relative intensity noise measurements indicate a relaxation frequency of 4.7 GHz at a moderate bias current, from which the maximum intrinsic modulation bandwidth was calculated to be 9.7 GHz. The experimental determination of the low linewidth enhancement factor and high relaxation frequency reinforce the potential of dilute nitride lasers for high-speed directly modulated fiber links
Keywords :
III-V semiconductors; frequency modulation; gallium compounds; indium compounds; laser noise; laser transitions; laser variables measurement; optical modulation; quantum well lasers; wide band gap semiconductors; 1.3 mum; 155 K; 4.7 GHz; 9.7 GHz; GaInNAs-GaAs; GaInNAs-GaAs quantum well laser diodes; frequency modulation; laser dynamic characteristics; linewidth enhancement factor; modulation bandwidth; relative intensity noise; Bandwidth; Diode lasers; Fiber lasers; Frequency modulation; Intensity modulation; Laser modes; Laser noise; Noise measurement; Quantum well lasers; Temperature; Dynamic properties; GaInNAs; optical communication; semiconductor lasers;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2006.889107
