Title :
Effects of X-ray irradiation on GIDL in MOSFETs
Author :
Acovic, Alexandre ; Hsu, Charles Ching-Hsiang ; Hsia, Liang-Choo ; Balasinski, Artur ; Ma, Tso-Ping
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
fDate :
4/1/1992 12:00:00 AM
Abstract :
The effect of X-ray irradiation on the gate-induced drain leakage (GIDL) is shown to be mostly due to the electrostatic effect of the trapped positive charge in n-channel MOSFETs. In p-channel MOSFETs, in addition, irradiation increases the interface-state-assisted tunneling component of the GIDL. In both n- and p-channel MOSFETs, a forming gas anneal at 400 degrees C completely removes all effects of irradiation on the GIDL.<>
Keywords :
X-ray effects; insulated gate field effect transistors; interface electron states; leakage currents; semiconductor device testing; tunnelling; 400 degC; GIDL; X-ray irradiation; electrostatic effect; forming gas anneal; gate-induced drain leakage; interface-state-assisted tunneling component; n-channel MOSFETs; p-channel MOSFETs; trapped positive charge; Annealing; Associate members; CMOS technology; Circuits; Fabrication; Leakage current; MOSFETs; Tunneling; Voltage; X-ray lithography;
Journal_Title :
Electron Device Letters, IEEE
