Title :
Optically pumped GaSb-based VECSEL emitting 0.6 W at 2.3 μm
Author :
Schulz, N. ; Rattunde, M. ; Manz, C. ; Kohler, K. ; Wild, C. ; Wagner, J. ; Beyertt, S.-S. ; Brauch, U. ; Kubler, T. ; Giesen, A.
Author_Institution :
Fraunhofer Inst. fur Angewandte Festkorperphysik, Germany
fDate :
5/1/2006 12:00:00 AM
Abstract :
We report on the operation and beam profile analysis of an optically pumped GaSb-based vertical-external-cavity surface-emitting laser at 2.33 μm. To compensate for the low thermal conductivity of the laser chip, an intracavity heat spreader made from polycrystalline chemical vapor deposition diamond was bonded to the top surface of the chip. In this configuration, at -18/spl deg/C, a maximum continuous-wave output power of 0.6 W in a multitransverse mode beam (M2/spl ap/2.7) was achieved, limited by the available pump power. Optimizing the resonator for TEM/sub 00/ laser emission (M2/spl ap/1.1), an output power exceeding 0.4 W was observed at the same temperature.
Keywords :
III-V semiconductors; gallium compounds; laser beams; laser cavity resonators; laser modes; optical pumping; semiconductor lasers; surface emitting lasers; thermal conductivity; -18 degC; 0.6 W; 2.33 mum; GaSb; GaSb-based VECSEL; beam profile analysis; intracavity heat spreader; multitransverse mode beam; optical pumping; polycrystalline chemical vapor deposition diamond; thermal conductivity; vertical-external-cavity surface-emitting laser; Chemical lasers; Gas lasers; Laser beams; Laser excitation; Optical pumping; Optical resonators; Pump lasers; Stimulated emission; Surface emitting lasers; Thermal conductivity; GaInAsSb; infrared; single mode; vertical-external-cavity surface-emitting laser (VECSEL);
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2006.873360
