DocumentCode
917303
Title
Short-Wavelength (λ ≈ 3.6 μm) In0.73Ga0.27Asndash;AlAsndash;InP Quantum-Cascade Laser
AuthorSemtsiv, Mykhaylo P. ; Dressler, Sebastian ; Masselink, William Ted
Author_InstitutionPhys. Dept., Humboldt-Univ., Berlin
Volume43
Issue1
fYear2007
Firstpage42
Lastpage46
AbstractWe describe the design and implementation of a short-wavelength quantum-cascade laser emitting in the range of 3.6-3.7 mum at 77 K and in the range of 3.8-3.9 mum at 300 K. The shortest wavelength laser emission observed at 77 K is lambda=3.62 mum. The active region is based on the strain-compensated In0.73Ga0.27As-AlAs heterosystem on InP. The laser operates in pulsed mode up to 300 K, and in continuous-wave mode at 77 K. Laser threshold current densities are as low as 600 A/cm2 at 10 K, 800 A/cm2 at 77 K, and 3.8 kA/cm2 at 300 K in pulsed mode. The temperature coefficient T0 is as high as 143 K. Driven with 50% duty cycle at 77 K, lasers deliver up to 70 mW average power per facet and the differential quantum efficiency is as high as 14% per cascade
KeywordsIII-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; infrared sources; laser modes; quantum cascade lasers; stimulated emission; 143 K; 3.6 to 3.7 mum; 300 K; 70 mW; 77 K; In0.73Ga0.27As-AlAs-InP; continuous-wave mode; differential quantum efficiency; laser emission; laser threshold current densities; pulsed mode operation; quantum-cascade laser; short-wavelength laser; strain compensated heterosystem; temperature coefficient; Conducting materials; Gas lasers; Indium phosphide; Laser modes; Laser transitions; Optical design; Optical pulses; Quantum cascade lasers; Temperature; Threshold current; Midinfrared; quantum-cascade laser (QCL); strain-compensated;
fLanguageEnglish
Journal_TitleQuantum Electronics, IEEE Journal of
Publisherieee
ISSN0018-9197
Typejour
DOI10.1109/JQE.2006.884577
Filename4049862
Link To Document
Author
Semtsiv, Mykhaylo P. ; Dressler, Sebastian ; Masselink, William Ted
Author_Institution
Phys. Dept., Humboldt-Univ., Berlin
Volume
43
Issue
1
fYear
2007
Firstpage
42
Lastpage
46
Abstract
We describe the design and implementation of a short-wavelength quantum-cascade laser emitting in the range of 3.6-3.7 mum at 77 K and in the range of 3.8-3.9 mum at 300 K. The shortest wavelength laser emission observed at 77 K is lambda=3.62 mum. The active region is based on the strain-compensated In0.73Ga0.27As-AlAs heterosystem on InP. The laser operates in pulsed mode up to 300 K, and in continuous-wave mode at 77 K. Laser threshold current densities are as low as 600 A/cm2 at 10 K, 800 A/cm2 at 77 K, and 3.8 kA/cm2 at 300 K in pulsed mode. The temperature coefficient T0 is as high as 143 K. Driven with 50% duty cycle at 77 K, lasers deliver up to 70 mW average power per facet and the differential quantum efficiency is as high as 14% per cascade
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; infrared sources; laser modes; quantum cascade lasers; stimulated emission; 143 K; 3.6 to 3.7 mum; 300 K; 70 mW; 77 K; In0.73Ga0.27As-AlAs-InP; continuous-wave mode; differential quantum efficiency; laser emission; laser threshold current densities; pulsed mode operation; quantum-cascade laser; short-wavelength laser; strain compensated heterosystem; temperature coefficient; Conducting materials; Gas lasers; Indium phosphide; Laser modes; Laser transitions; Optical design; Optical pulses; Quantum cascade lasers; Temperature; Threshold current; Midinfrared; quantum-cascade laser (QCL); strain-compensated;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.2006.884577
Filename
4049862
Link To Document