Pulse generation in planar Gunn devices with varying nL product

Measurements of the current reduction in planar Gunn devices by domain nucleation are reported. The devices were made of epitaxially grown GaAs layers. The measurements showed a decrease of the current reduction, relative to the threshold current Ith, with decreasing nL product, beginning at about nL = 1013 cm¿2, where n is the electron concentration and L is the length of active channel.