Title :
High-breakdown-voltage AlSbAs/InAs n-channel field-effect transistors
Author :
Li, X. ; Longenbach, K.F. ; Wang, Y. ; Wang, Wen I.
Author_Institution :
Dept. of Electr. Eng., Columbia Univ., New York, NY, USA
fDate :
4/1/1992 12:00:00 AM
Abstract :
InAs channel field-effect transistors of 1- mu m gate length were grown by molecular beam epitaxy and observed to operate at channel electric fields (20 kV/cm) higher than previously demonstrated and several times greater than the threshold for impact ionization in bulk InAs. Voltage gains on the order of 10 were observed with transconductances as high as 414 mS/mm and output conductances as low as 33 mS/mm. These voltage gains are comparable to those of GaAs-based devices and are the highest observed for InAs channel devices. The results demonstrate the potential for practical room-temperature operation of InAs FETs.<>
Keywords :
III-V semiconductors; aluminium compounds; field effect transistors; impact ionisation; indium compounds; 1 micron; 33 mS; 414 mS; AlSbAs-InAs; channel electric fields; gate length; high breakdown voltage; impact ionization threshold; molecular beam epitaxy; n-channel field-effect transistors; output conductances; room-temperature operation; transconductances; voltage gains; Breakdown voltage; Buffer layers; FETs; Gallium arsenide; Impact ionization; Indium phosphide; Molecular beam epitaxial growth; Satellites; Temperature; Threshold voltage;
Journal_Title :
Electron Device Letters, IEEE
