Title :
Noise and distortion considerations in charge-coupled devices
Author_Institution :
Naval Research Laboratory, Washington, USA
Abstract :
Noise and distortion considerations for charge-coupled devices used in imaging applications are presented. Distortion occurs because of transfer inefficiency and leakage current. Noise contributions due to thermal noise during the formation of the potential wells, shot noise in the leakage current and interface-state noise are discussed.
Keywords :
electric distortion; leakage currents; metal-insulator-semiconductor devices; shot noise; thermal noise; MOS devices; charge coupled devices; distortion; imaging applications; leakage current; semiconductor devices; shot noise; thermal noise;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19720150
