• DocumentCode
    917346
  • Title

    Noise and distortion considerations in charge-coupled devices

  • Author

    Barbe, D.F.

  • Author_Institution
    Naval Research Laboratory, Washington, USA
  • Volume
    8
  • Issue
    8
  • fYear
    1972
  • Firstpage
    207
  • Lastpage
    208
  • Abstract
    Noise and distortion considerations for charge-coupled devices used in imaging applications are presented. Distortion occurs because of transfer inefficiency and leakage current. Noise contributions due to thermal noise during the formation of the potential wells, shot noise in the leakage current and interface-state noise are discussed.
  • Keywords
    electric distortion; leakage currents; metal-insulator-semiconductor devices; shot noise; thermal noise; MOS devices; charge coupled devices; distortion; imaging applications; leakage current; semiconductor devices; shot noise; thermal noise;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19720150
  • Filename
    4235600
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=917346