Characterization of the Main Semiconductor Laser Static and Dynamic Working Parameters From CW Optical Spectrum Measurements

Author

Villafranca, Asier ; Lasobras, Javier ; Lázaro, José A. ; Garcés, Ignacio

Author_Institution

TOYBA Lab., Aragon Inst. of Eng. Res., Cuarte

Volume

43

Issue

2

fYear

2007

Firstpage

116

Lastpage

122

Abstract

We present a complete characterization of the work parameters of several types of semiconductor lasers. Static parameters as: power, linewidth and linewidth enhancement factor and also dynamic parameters such as: relaxation oscillations, relative intensity noise and damping rates are calculated using measurements of the optical spectrum of the lasers operated in continuous-wave mode. Methods for the calculation of these parameters are described and applied to the lasers under test by means of a single general setup and a single set of measurements

Keywords

damping; laser modes; laser noise; semiconductor lasers; spectral line breadth; continuous-wave mode; damping rates; dynamic working parameter characterization; laser linewidth; laser power parameter; linewidth enhancement factor; optical spectrum measurements; relative intensity noise; relaxation oscillations; semiconductor laser; static parameter characterization; Damping; Laser modes; Laser noise; Noise measurement; Optical noise; Power lasers; Power measurement; Semiconductor device noise; Semiconductor lasers; Testing; Distributed feedback lasers (DFB); laser measurements; linewidth enhancement factor; multiquantum-well lasers (MQW); relative intensity noise (RIN); semiconductor lasers; vertical-cavity surface-emitting lasers (VCSELs);

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/JQE.2006.886813

Filename

4049867