DocumentCode :
917352
Title :
Characterization of the Main Semiconductor Laser Static and Dynamic Working Parameters From CW Optical Spectrum Measurements
Author :
Villafranca, Asier ; Lasobras, Javier ; Lázaro, José A. ; Garcés, Ignacio
Author_Institution :
TOYBA Lab., Aragon Inst. of Eng. Res., Cuarte
Volume :
43
Issue :
2
fYear :
2007
Firstpage :
116
Lastpage :
122
Abstract :
We present a complete characterization of the work parameters of several types of semiconductor lasers. Static parameters as: power, linewidth and linewidth enhancement factor and also dynamic parameters such as: relaxation oscillations, relative intensity noise and damping rates are calculated using measurements of the optical spectrum of the lasers operated in continuous-wave mode. Methods for the calculation of these parameters are described and applied to the lasers under test by means of a single general setup and a single set of measurements
Keywords :
damping; laser modes; laser noise; semiconductor lasers; spectral line breadth; continuous-wave mode; damping rates; dynamic working parameter characterization; laser linewidth; laser power parameter; linewidth enhancement factor; optical spectrum measurements; relative intensity noise; relaxation oscillations; semiconductor laser; static parameter characterization; Damping; Laser modes; Laser noise; Noise measurement; Optical noise; Power lasers; Power measurement; Semiconductor device noise; Semiconductor lasers; Testing; Distributed feedback lasers (DFB); laser measurements; linewidth enhancement factor; multiquantum-well lasers (MQW); relative intensity noise (RIN); semiconductor lasers; vertical-cavity surface-emitting lasers (VCSELs);
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.2006.886813
Filename :
4049867
Link To Document :
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