Title :
Electronic properties of gallium-arsenide field-effect-transistor structure used as detector for acoustic surface waves
Author_Institution :
Technical University of Denmark, Physics Laboratory III, Lyngby, Denmark
Abstract :
A GaAs field-effect-transistor structure has been used as a detector for acoustic surface waves in the frequency range 65¿200 MHz. The conversion loss is shown to be strongly dependent on the source-gate and source-drain voltages. The minimum value obtained is 26 dB for frequencies between 80 and 150 MHz.
Keywords :
acoustic microwave devices; field effect transistors; microwave detectors; semiconductor materials; 65-200 MHZ; GaAs; acoustic microwave devices; acoustic surface waves; field effect transistors; microwave detectors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19720156
