• DocumentCode
    917402
  • Title

    Electronic properties of gallium-arsenide field-effect-transistor structure used as detector for acoustic surface waves

  • Author

    Bruun, M.

  • Author_Institution
    Technical University of Denmark, Physics Laboratory III, Lyngby, Denmark
  • Volume
    8
  • Issue
    8
  • fYear
    1972
  • Firstpage
    215
  • Lastpage
    216
  • Abstract
    A GaAs field-effect-transistor structure has been used as a detector for acoustic surface waves in the frequency range 65¿200 MHz. The conversion loss is shown to be strongly dependent on the source-gate and source-drain voltages. The minimum value obtained is 26 dB for frequencies between 80 and 150 MHz.
  • Keywords
    acoustic microwave devices; field effect transistors; microwave detectors; semiconductor materials; 65-200 MHZ; GaAs; acoustic microwave devices; acoustic surface waves; field effect transistors; microwave detectors;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19720156
  • Filename
    4235606
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=917402