• DocumentCode
    917416
  • Title

    On the rate of growth and decay of high-field domains in n-type gallium arsenide

  • Author

    Guha, Saikat

  • Volume
    59
  • Issue
    4
  • fYear
    1971
  • fDate
    4/1/1971 12:00:00 AM
  • Firstpage
    718
  • Lastpage
    719
  • Abstract
    The time rates of the growth and decay of high-field domains in n-type gallium arsenide are calculated taking into consideration the simultaneous presence of a decaying domain and a growing domain in the sample. The current waveform during the transient condition as obtained from this model is also presented.
  • Keywords
    Anodes; Boundary conditions; Cathodes; Equations; Gallium arsenide; Gunn devices; Shape; Steady-state; Voltage; Writing;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1971.8247
  • Filename
    1450177
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=917416