Title :
Fundamental modelling of cylindrical-geometry bipolar transistors
Author_Institution :
Mullard Research Laboratories, Redhill, UK
Abstract :
Fundamental modelling programs which calculate the properties of planar-geometry bipolar transistors can be used to calculate the properties of cylindrical-geometry bipolar transistors by a transformation of co-ordinates.
Keywords :
bipolar transistors; modelling; semiconductor device models; bipolar transistors; cylindrical geometry; modelling; planar geometry; transformation of coordinates;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19720160
