Title :
Leakage currents of m.o.s. devices under surface-depletion conditions
Author :
Stuart, R.A. ; Eccleston, W.
Author_Institution :
University of Liverpool, Department of Electrical Engineering & Electronics, Liverpool, UK
Abstract :
It is found that the drain current of m.o.s.t. devices depends exponentially on gate voltage over a wide range of current when the surface of the device is depleted. An explanation of this effect is given. The results show that low-current measurements of this type for a variety of substrate bias conditions can provide information on the density of midgap states and the amount of impurity segregation in practical structures.
Keywords :
field effect transistors; leakage currents; MOST devices; density; drain current; impurity segregation; leakage currents; low current measurements; midgap states; surface depletion;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19720163
