Title :
Double-extrapolation method for m.o.s.t. threshold-voltage measurements
Author_Institution :
Post Office, Research Department, London, UK
Abstract :
The measurement of the m.o.s.-transistor threshold voltage under current-saturation conditions by double extrapolation to VD=0 and ID=0 is described. For comparison, it is shown that corresponding values obtained on thin- and thick-oxide devices conventionally, by single extrapolation to ID=0, may depend critically on the drain voltage and misrepresent the voltage at which the channel becomes inverted.
Keywords :
characteristics measurement; field effect transistors; voltage measurement; MOST; current saturation; double; extrapolation; measurement; threshold voltage;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19720170
