DocumentCode
917553
Title
Double-extrapolation method for m.o.s.t. threshold-voltage measurements
Author
Mellor, P.J.T.
Author_Institution
Post Office, Research Department, London, UK
Volume
8
Issue
9
fYear
1972
Firstpage
236
Lastpage
237
Abstract
The measurement of the m.o.s.-transistor threshold voltage under current-saturation conditions by double extrapolation to VD=0 and ID=0 is described. For comparison, it is shown that corresponding values obtained on thin- and thick-oxide devices conventionally, by single extrapolation to ID=0, may depend critically on the drain voltage and misrepresent the voltage at which the channel becomes inverted.
Keywords
characteristics measurement; field effect transistors; voltage measurement; MOST; current saturation; double; extrapolation; measurement; threshold voltage;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19720170
Filename
4235621
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