DocumentCode
917642
Title
Hot-carrier effects on interface-trap capture cross sections in MOSFETs as studied by charge pumping
Author
Chen, Wenliang ; Balasinski, Artur ; Zhang, Binglong ; Ma, Tso-Ping
Author_Institution
Yale Univ., New Haven, CT, USA
Volume
13
Issue
4
fYear
1992
fDate
4/1/1992 12:00:00 AM
Firstpage
201
Lastpage
202
Abstract
A rapid charge-pumping method was used to measure the interface-trap parameters in MOSFETs. The geometric mean of the electron and hole interface-trap capture cross sections decreases significantly (as much as two orders of magnitude) after Fowler-Nordheim (F-N) injection, and gradually recovers toward its original value. This effect is consistent with the interface-trap transformation process observed in MOS capacitors.<>
Keywords
electron traps; hole traps; hot carriers; insulated gate field effect transistors; interface electron states; semiconductor device testing; Fowler-Nordheim injection; MOSFETs; charge pumping; electron interface trap; hole interface-trap; hot carrier effects; interface-trap capture cross sections; interface-trap transformation; Charge carrier processes; Charge pumps; Current measurement; Electron traps; Frequency measurement; Hot carrier effects; MOSFETs; Pulse measurements; Radiative recombination; Voltage-controlled oscillators;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.145020
Filename
145020
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