Title :
Computer study of submicrometre f.e.t.s
Author :
Reiser, M. ; Wolf, P.
Author_Institution :
IBM Zurich Research Laboratory, Rÿschlikon, Switzerland
Abstract :
The electrical properties of f.e.t.s with submicrometre gates are investigated by means of a 2-dimensional computer model. It is found that the gain-bandwidth product increases with decreasing gate length and reaches a value of 70 GHz for 0.1 ¿m gates. This improvement is, however, at the expense of open-circuit voltage gain. A practical limit of the gate length for useful devices is found to be about 0.1 ¿m.
Keywords :
computer applications; electronics applications of computers; field effect transistors; modelling; semiconductor device models; FET; computer model; electrical properties; submicrometre gates; two dimensional analysis;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19720188
