Latent thermally activated interface-trap generation in MOS devices

Author

Schwank, James R. ; Fleetwood, Daniel M. ; Shaneyfelt, Marty R. ; Winokur, Peter S.

Author_Institution

Sandia Nat. Lab., Albuquerque, NM, USA

Volume

13

Issue

4

fYear

1992

fDate

4/1/1992 12:00:00 AM

Firstpage

203

Lastpage

205

Abstract

A large increase in interface-trap density (up to a factor of five) has been observed in commercial MOS devices at very long times after irradiation (>10/sup 6/ s). This latent buildup occurs after an initial apparent saturation of interface-trap density, which occurs typically within approximately 10/sup 2/-10/sup 4/ s after irradiation. The latent buildup is thermally activated. with an activation energy of approximately 0.47 ev. Within experimental uncertainty, this is equal to the activation energy ( approximately 0.45 eV) for the diffusion of molecular hydrogen in bulk fused silica. Latent interface-trap buildup can degrade the performance of devices in low-dose-rate radiation environments (e.g. space).<>

Keywords

X-ray effects; gamma-ray effects; insulated gate field effect transistors; interface electron states; semiconductor device testing; CMOS transistors; H/sub 2/ diffusion; MOS devices; Si-SiO/sub 2/; X-ray irradiation; activation energy; gamma ray irradiation; interface-trap density; latent buildup; low-dose-rate radiation environments; thermally activated interface-trap generation; Annealing; CMOS process; Conductors; Hydrogen; Ionizing radiation; MOS devices; Silicon compounds; Temperature; Thermal degradation; Threshold voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.145021

Filename

145021