DocumentCode :
917838
Title :
Performance Improvement of N-Type 
Active-Channel TFTs Grown by Low-Temperature Plasma-Enhanced ALD
Author :
Park, Jae-Woo ; Lee, Dongyun ; Kwon, Hakyoung ; Yoo, Seunghyup ; Huh, Jongmoo
Author_Institution :
Sch. of Electr. Eng. & Comput. Sci., Korea Adv. Inst. of Sci. & Technol., Daejeon
Volume :
30
Issue :
7
fYear :
2009
fDate :
7/1/2009 12:00:00 AM
Firstpage :
739
Lastpage :
741
Abstract :
We report on performance improvement of n-type oxide-semiconductor thin-film transistors (TFTs) based on TiOx active channels grown at 250degC by plasma-enhanced atomic layer deposition. TFTs with as-grown TiOx films exhibited the saturation mobility (musat) as high as 3.2 cm2/V ldr s but suffered from the low on-off ratio (ION/IOFF) of 2.0 times 102 ldr N2O plasma treatment was then attempted to improve ION/IOFF. Upon treatment, the TiOx TFTs exhibited ION/IOFF of 4.7 times 105 and musat of 1.64 cm2/V ldr s, showing a much improved performance balance and, thus, demonstrating their potentials for a wide variety of applications such as backplane technology in active-matrix displays and radio-frequency identification tags.
Keywords :
atomic layer deposition; electron mobility; plasma deposition; thin film transistors; titanium compounds; N-type active-channel TFT; TiOx; active-matrix displays; backplane technology; low-temperature plasma-enhanced ALD; n-type oxide-semiconductor thin-film transistor; plasma treatment; plasma-enhanced atomic layer deposition; radio-frequency identification tags; temperature 250 C; Plasma-enhanced atomic layer deposition (PEALD); thin-film transistor (TFT); titanium oxide $(hbox{TiO}_{x})$
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2009.2021587
Filename :
4982619
Link To Document :
