Performance Improvement of N-Type $\hbox {TiO}_{x}$ Active-Channel TFTs Grown by Low-Temperature Plasma-Enhanced ALD

We report on performance improvement of n-type oxide-semiconductor thin-film transistors (TFTs) based on TiO_x active channels grown at 250degC by plasma-enhanced atomic layer deposition. TFTs with as-grown TiO_x films exhibited the saturation mobility (mu_sat) as high as 3.2 cm²/V ldr s but suffered from the low on-off ratio (I_ON/I_OFF) of 2.0 times 10² ldr N₂O plasma treatment was then attempted to improve I_ON/I_OFF. Upon treatment, the TiO_x TFTs exhibited I_ON/I_OFF of 4.7 times 10⁵ and mu_sat of 1.64 cm²/V ldr s, showing a much improved performance balance and, thus, demonstrating their potentials for a wide variety of applications such as backplane technology in active-matrix displays and radio-frequency identification tags.