Title :
Grafted GaAs detectors on lithium niobate and glass optical waveguides
Author :
Yi-Yan, A. ; Chan, W.K. ; Gmitter, T.J. ; Florez, L.T. ; Jackel, J.L. ; Yablonovitch, E. ; Bhat, R. ; Harbison, J.P.
Author_Institution :
Bellcore, Red Bank, NJ, USA
Abstract :
The integration of a GaAs MSM (metal-semiconductor-metal) detector with LiNbO/sub 3/ and glass optical waveguides is discussed. A 250-nm thick GaAs detector layer was fabricated using a recently reported liftoff technique and subsequently grafted onto the waveguide chip. Proof of the optical interaction between the waveguide and its grafted detector was provided by the total absorption of 633 nm of guided light within a distance of approximately 1 mm from the leading edge of the GaAs layer and by the presence of a photocurrent at the detector terminals. It is suggested that the grafting technique will prove useful in the design of new and cost-effective optoelectronic devices.<>
Keywords :
III-V semiconductors; gallium arsenide; integrated optics; integrated optoelectronics; metal-semiconductor-metal structures; optical waveguides; optical workshop techniques; photodetectors; 250 nm; 633 nm; GaAs detector layer; III-V semiconductor; LiNbO/sub 3/; cost-effective optoelectronic devices; design; detector terminals; glass optical waveguides; grafted GaAs detectors; grafting technique; guided light; leading edge; liftoff technique; metal-semiconductor-metal; optical interaction; photocurrent; total absorption; waveguide chip; Conducting materials; Detectors; Gallium arsenide; Glass; High speed optical techniques; Lithium niobate; Optical buffering; Optical materials; Optical waveguides; Semiconductor materials;
Journal_Title :
Photonics Technology Letters, IEEE
