DocumentCode :
917903
Title :
Phase characteristics of microwave avalanche-diode amplifiers
Author :
Morgan, G.B. ; Siow, K.C.
Author_Institution :
University of Wales Institute of Science & Technology, Department of Applied Physics, Cardiff, UK
Volume :
8
Issue :
11
fYear :
1972
Firstpage :
280
Lastpage :
281
Abstract :
The phase and gain characteristics of wideband, coaxial X band avalanche-diode amplifiers have been determined, and typical data are presented for an 11 GHz amplifier. At a gain of 15 dB, the phase linearity was less than 4°, the a.m.-p.m. conversion was less than 8 deg/dB and the phase sensitivity to current was about 0.2 deg/mA.
Keywords :
avalanche diodes; microwave amplifiers; wideband amplifiers; 11.0 GHZ; X band; avalanche diodes; microwave amplifiers; phase characteristics; wideband amplifiers;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19720205
Filename :
4235658
Link To Document :
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