• DocumentCode
    917903
  • Title

    Phase characteristics of microwave avalanche-diode amplifiers

  • Author

    Morgan, G.B. ; Siow, K.C.

  • Author_Institution
    University of Wales Institute of Science & Technology, Department of Applied Physics, Cardiff, UK
  • Volume
    8
  • Issue
    11
  • fYear
    1972
  • Firstpage
    280
  • Lastpage
    281
  • Abstract
    The phase and gain characteristics of wideband, coaxial X band avalanche-diode amplifiers have been determined, and typical data are presented for an 11 GHz amplifier. At a gain of 15 dB, the phase linearity was less than 4°, the a.m.-p.m. conversion was less than 8 deg/dB and the phase sensitivity to current was about 0.2 deg/mA.
  • Keywords
    avalanche diodes; microwave amplifiers; wideband amplifiers; 11.0 GHZ; X band; avalanche diodes; microwave amplifiers; phase characteristics; wideband amplifiers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19720205
  • Filename
    4235658