Title :
Level-shift compensation in m.o.s. bucket-brigade circuits operated in an analogue mode
Author :
Butler, W.J. ; Barron, M.B. ; Kurz, B.
Author_Institution :
General Electric Company, Corporate Research & Development, Schenectady, USA
Abstract :
As a result of net loss (or gain) of charge to the substrate, the signal component at the output of a bucket-brigade circuit is subject to a direct-voltage shift which reduces the dynamic range of the device. Compensation for such level-shifting (of either polarity) can be provided by means of single additional m.o.s. devices placed at suitable intervals along the delay line.
Keywords :
delay lines; metal-insulator-semiconductor devices; signal processing; MOS; analogue mode; delay lines; gain; level shift compensation; metal insulator semiconductor devices; signal processing; substrate;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19720210
