Title :
X band n+-p-p+ IMPATT diodes
Author_Institution :
Hughes Research Laboratories, Torrance, USA
Abstract :
Silicon IMPATT diodes, utilising holes as the drifting carrier, have been fabricated. An output power of 0.5 W with 12% efficiency at X band was obtained.
Keywords :
IMPATT diodes; microwave oscillators; IMPATT diodes; X band; n+-p-p+; silicon;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19720219
