Title :
Gridistor: field-effect transistor for an ultra-high-frequency power amplifier
Author :
Durand, P. ; Laplanche, J.
Author_Institution :
Centre National d´Ã\x89tudes des Telecommunications, Lannion, France
Abstract :
The characteristics and performance of a 1 W, 1 GHz gridistor, an original field-effect silicon transistor with an embedded grid, has enabled us to achieve, in class A, a 1 W power output with a gain of 7 dB and a good linearity in output-power variation with input power, with a common-grid configuration.
Keywords :
field effect transistors; microwave amplifiers; power amplifiers; UHF; class A; field effect transistor; gridistor; power amplifier; silicon;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19720226
