Title :
Influence of carrier velocity saturation in the unswept layer on the efficiency of avalanche transit time diodes
Author :
van Iperen, B.B. ; Tjassens, H.
fDate :
6/1/1971 12:00:00 AM
Abstract :
Due to velocity saturation of the carriers, the series resistance caused by the unswept layer in avalanche transit time diodes increases with increasing ac voltage on the diode. In GE npp+diodes this effect is found to influence the efficiency considerably and the same may be true for Si npp+diodes.
Keywords :
Conductivity; Current measurement; Electric fields; Gallium arsenide; Gunn devices; Lattices; Schottky diodes; Steady-state; Temperature; Voltage;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1971.8323
