Abstract :
Using the dispersion relation previously developed by these authors, and suitable boundary conditions, the small-signal impedance of the avalanche region in an IMPATT diode is derived. In this derivation unequal, but constant, hole and electron velocities and ionization coefficients are assumed. The impedance is derived for the case of infinite multiplication and is plotted for both Si and GaAs diodes. The effects of the drift regions are not included.
