DocumentCode
918389
Title
A Polar Transmitter With CMOS Programmable Hysteretic-Controlled Hybrid Switching Supply Modulator for Multistandard Applications
Author
Choi, Jinsung ; Kim, Dongsu ; Kang, Daehyun ; Kim, Bumman
Author_Institution
Dept. of Electr. Eng., Pohang Univ. of Sci. & Technol. (POSTECH), Pohang, South Korea
Volume
57
Issue
7
fYear
2009
fDate
7/1/2009 12:00:00 AM
Firstpage
1675
Lastpage
1686
Abstract
This paper presents the realization of a linear polar transmitter supporting multistandard applications. The harmonic-tuned class-AB biased (class-AB/F) power amplifier (PA) with the novel envelope shaping method linearly amplifies the input signal with high efficiency. The hybrid switching supply modulator with programmable hysteretic comparator enables the multimode operation whatever the envelope signal characteristics such as the peak-to-average power ratio and the bandwidth are. The designed polar transmitter is fabricated with CMOS 0.13-mum technology and InGaP/GaAs 2-mum HBT process for the supply modulator and the PA, respectively. For the IEEE 802.16e m-WiMax signal, it shows a power-added efficiency (PAE), an average output power (Pout), and a gain of 34.3%, 23.9 dBm, and 27.9 dB, respectively. Without any predistortion techniques, it satisfies the overall spectrum emission mask specifications. The relative constellation error and the error vector magnitude for the m-WiMax signal are -30.5 dB and 2.98%, respectively. For a WCDMA signal, it presents a PAE, a Pout, and a gain of 46%, 29 dBm, and 27.8 dB, respectively. For the EDGE signal, it delivers a PAE of 45.3% at a Pout of 27.8 dBm with a gain of 29.4 dB. There is about a 7% improvement of the overall PAE for EDGE through the optimum multimode operation.
Keywords
3G mobile communication; CMOS analogue integrated circuits; III-V semiconductors; WiMax; comparators (circuits); gallium arsenide; heterojunction bipolar transistors; indium compounds; modulators; power amplifiers; programmable circuits; radio transmitters; switching circuits; CMOS analog integrated circuit; CMOS technology; EDGE signal; HBT process; IEEE 802.16e m-WiMax signal; InGaP-GaAs; average output power; bandwidth; efficiency 34.3 percent; efficiency 45.3 percent; efficiency 46 percent; envelope shaping method; gain 27.8 dB; gain 27.9 dB; harmonic-tuned class-AB biased power amplifier; linear polar transmitter; optimum multimode operation; overall spectrum emission mask specification; peak-to-average power ratio; power-added efficiency; predistortion techniques; programmable hysteretic comparator; size 0.13 mum; size 2 mum; CMOS analog integrated circuits (ICs); dc–dc power conversion; multimode; power amplifiers (PAs); transmitters; wireless communication;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/TMTT.2009.2021880
Filename
4982670
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