Frequency/temperature characteristics of Gunn devices

The variability and large magnitude of the frequency/temperature coefficient of Gunn oscillators has limited the application of these devices. The letter outlines a program of experiments and computer simulations aimed at achieving an understanding of the basic ¿f/¿T mechanism and thus producing a deep stable oscillator. Our simulations successfully predict observed trends in the ¿f/¿T behaviour of Gunn devices with both alloyed metal and n+ regrown contacts. The results of our study show that stable oscillators with a small loaded Q factor and near maximum power output are realisable.